RU30P3B
P-Channel Advanced Power MOSFET
Features
Pin Description
• -30V/-3.5A,
RDS (ON) =50mΩ(Typ.)@VGS=-10V
D
RDS (ON) =80mΩ(Typ.)@VGS=-4.5V
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
G
• Lead Free and Green Devices Available (RoHS Compliant)
S
SOT23
D
Applications
• Load Switch
G
S
P-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
-30
±20
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
150
°C
°C
A
TSTG
IS
-55 to 150
-1
TA=25°C
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
-14
-3.5
-2.8
1
A
A
IDP
②
Continuous Drain Current(VGS=-10V)
Maximum Power Dissipation
ID
PD
W
0.64
-
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
RθJC
°C/W
°C/W
③
125
RθJA
Drain-Source Avalanche Ratings
④
Avalanche Energy, Single Pulsed
TBD
mJ
EAS
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
1
www.ruichips.com