Datasheet > RU30L30M

RU30L30M

更新时间： 2024-11-07 17:01:43

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
9页	270K
描述
DFN3333

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中文翻译

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数据手册

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RU30L30M 数据手册

RU30L30M

P-Channel Advanced Power MOSFET

Features

Pin Description

• -30V/-30A,

DS (ON) =12mΩ(Typ.)@VGS=-10V

DS (ON) =20mΩ(Typ.)@VGS=-4.5V

• Super High Dense Cell Design

• Reliable and Rugged

• 100% avalanche tested

PDFN3333

• Lead Free and Green Devices Available

(RoHS Compliant)

Applications

• Power Management

• Load Switching

P-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

-30

±20

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

150

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

T_STG

-55 to 150

①

-30

I_S

T_C=25°C

Mounted on Large Heat Sink

②

-96

I_DP

300μs Pulse Drain Current Tested

T_C=25°C

①

-30

①

-19

③

T_C=100°C

T_A=25°C

T_A=70°C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

I_D

Continuous Drain Current(V_GS=-10V)

-9.3

③

-7.5

P_D

Maximum Power Dissipation

③

3.5

③

2.3

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. A– JUN., 2012

www.ruichips.com

12 3 4 5 6 7...9

中文翻译

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