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RU30J30M2 PDF预览

RU30J30M2

更新时间: 2024-11-06 17:01:47
品牌 Logo 应用领域
锐骏半导体 - RUICHIPS /
页数 文件大小 规格书
8页 719K
描述
DFN3333

RU30J30M2 数据手册

 浏览型号RU30J30M2的Datasheet PDF文件第2页浏览型号RU30J30M2的Datasheet PDF文件第3页浏览型号RU30J30M2的Datasheet PDF文件第4页浏览型号RU30J30M2的Datasheet PDF文件第5页浏览型号RU30J30M2的Datasheet PDF文件第6页浏览型号RU30J30M2的Datasheet PDF文件第7页 
RU30J30M2  
Dual Symmetric N-Channel MOSFET  
Features  
Pin Description  
S2  
• 30V/30A,  
RDS (ON) =7m(Typ.)@VGS=10V  
S2  
S2  
G2  
RDS (ON) =10m(Typ.)@VGS=4.5V  
• Fast Switching Speed  
• Low gate Charge  
• 100% avalanche tested  
• Lead Free and Green Devices Available (RoHS Compliant)  
D1  
D1  
D1  
G1  
PIN1  
PDFN3333  
Applications  
• Switching Application Systems  
• DC/DC Converters  
Dual N-Channel MOSFET  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Unit  
Common Ratings (TC=25°C Unless Otherwise Noted)  
VDSS  
VGSS  
TJ  
Drain-Source Voltage  
30  
±20  
V
Gate-Source Voltage  
Maximum Junction Temperature  
Storage Temperature Range  
Diode Continuous Forward Current  
150  
°C  
°C  
A
TSTG  
IS  
-55 to 150  
20  
TC=25°C  
Mounted on Large Heat Sink  
300μs Pulse Drain Current Tested  
TC=25°C  
TC=25°C  
TC=100°C  
TA=25°C  
TA=70°C  
TC=25°C  
TC=100°C  
TA=25°C  
TA=70°C  
120  
30  
A
A
IDP  
Continuous Drain Current@TC(VGS=10V)  
19  
ID  
10.8  
8.7  
29  
Continuous Drain Current@TA(VGS=10V)  
Maximum Power Dissipation@TC  
12  
PD  
W
3.5  
2.3  
Maximum Power Dissipation@TA  
Shenzhen City Ruichips Semiconductor Co., Ltd  
Rev. A– JUL., 2018  
1
www.ruichips.com  

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