Datasheet > RU30E7H

RU30E7H

更新时间： 2024-11-21 09:42:03

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
9页	266K
描述
N-Channel Advanced Power MOSFET

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中文翻译

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数据手册

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RU30E7H 数据手册

RU30E7H

N-Channel Advanced Power MOSFET

Features

Pin Description

• 30V/7.8A,

DS (ON) =16mW(Typ.) @ VGS=10V

DS (ON) =25mW(Typ.) @ VGS=4.5V

• Super High Dense Cell Design

• Reliable and Rugged

• ESD Protected

SOP-8

• Lead Free and Green Available

Applications

• Power Management

• Converters

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

±20

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

150

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

T_STG

I_S

-55 to 150

T_A=25°C

Mounted on Large Heat Sink

①

I_DP

300μs Pulse Drain Current Tested

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

7.8

I_D

Continuous Drain Current(V_GS=10V)

6.3

2.5

P_D

Maximum Power Dissipation

1.6

②

R_qJA

Thermal Resistance-Junction to Ambient

°C/W

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. A– OCT., 2011

www.ruichips.com

12 3 4 5 6 7...9

中文翻译

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