Datasheet > RU30E20H

RU30E20H

更新时间： 2024-09-14 17:01:39

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	401K
描述
SOP-8

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中文翻译

获取价格

数据手册

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RU30E20H 数据手册

RU30E20H

N-Channel Advanced Power MOSFET

Features

Pin Description

• 30V/20A,

R_{DS (ON)}=4.6mΩ(Typ.)@V_GS=10V

R_{DS (ON)}=5.8mΩ(Typ.)@V_GS=4.5V

R_{DS (ON)}=15mΩ(Typ.)@V_GS=2.5V

• Low On-Resistance

• ESD Protected

• Super High Dense Cell Design

• Reliable and Rugged

• Lead Free and Green Devices Available (RoHS Compliant)

pin1

SOP-8

Applications

• Switching Application Systems

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

±16

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

150

°C

T_STG

I_S

-55 to 150

T_A=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

2.5

1.6

I_DP

②

Continuous Drain Current(V_GS=4.5V)

Maximum Power Dissipation

I_D

P_D

R_JC

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

°C/W

③

R_JA

Drain-Source Avalanche Ratings

④

E_AS

Avalanche Energy, Single Pulsed

Shenzhen City Ruichips Semiconductor Co., Ltd

Rev. A– MAR., 2017

www.ruichips.com

12 3 4 5 6 7 8

中文翻译

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