Datasheet > RU30D20M2

RU30D20M2

更新时间： 2024-09-14 17:01:07

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	386K
描述
DFN3333

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中文翻译

获取价格

数据手册

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RU30D20M2 数据手册

RU30D20M2

N-Channel Advanced Power MOSFET

Features

Pin Description

• 30V/20A,

R_{DS (ON)}=8.5mΩ(Typ.)@V_GS=10V

R_{DS (ON)}=11.5mΩ(Typ.)@V_GS=4.5V

• Super High Dense Cell Design

• Fast Switching Speed

• Low gate Charge

• 100% avalanche tested

• Lead Free and Green Devices Available (RoHS Compliant)

PIN1

PDFN3333

Applications

• Switching Application Systems

Dual N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

±20

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

150

°C

T_STG

I_S

-55 to 150

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

I_DP

Continuous Drain Current@T_C(V_GS=10V)

②

I_D

10.8

8.7

③

Continuous Drain Current@T_A(V_GS=10V)

Maximum Power Dissipation@T_C

P_D

3.5

2.3

③

Maximum Power Dissipation@T_A

Ruichips Semiconductor Co., Ltd

Rev. A– AUG., 2016

www.ruichips.com

12 3 4 5 6 7 8

中文翻译

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