Datasheet > RU30C8H

RU30C8H

更新时间： 2024-09-14 17:01:47

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
10页	337K
描述
SOP-8

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中文翻译

获取价格

数据手册

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RU30C8H 数据手册

RU30C8H

Complementary Advanced Power MOSFET

Features

Pin Description

• N-Channel

30V/8A,

R_{DS (ON)}=12mΩ(Typ.) @ V_GS=10V

R_{DS (ON)}=16mΩ(Typ.) @ V_GS=4.5V

• P-Channel

-30V/-7A,

R_{DS (ON)}=18mΩ (Typ.) @ V_GS=-10V

R_{DS (ON)}=25mΩ (Typ.) @ V_GS=-4.5V

• Reliable and Rugged

• ESD Protected

pin1

• Lead Free and Green Devices Available (RoHS Compliant)

SOP-8

Applications

• Load Switch

Complementary MOSFET

Absolute Maximum Ratings

Parameter

Symbol

N-Channel P-Channel

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

-30

±12

150

Gate-Source Voltage

±12

150

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

°C

T_STG

I_S

-55 to 150 -55 to 150

T_A=25°C

2.7

-2.5

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

-28

-7

I_DP

②

Continuous Drain Current(V_GS=±10V)

Maximum Power Dissipation

I_D

6.5

-5.6

P_D

1.3

TBD

62.5

1.3

TBD

62.5

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

R_θJC

°C/W

③

R_θJA

Drain-Source Avalanche Ratings

④

Avalanche Energy, Single Pulsed

TBD

E_AS

Ruichips Semiconductor Co., Ltd

Rev. A– DEC., 2013

www.ruichips.com

12 3 4 5 6 7...10

中文翻译

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