Datasheet > RU30C4C6

RU30C4C6

更新时间： 2024-09-14 17:00:47

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
9页	314K
描述
SOT23-6

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中文翻译

获取价格

数据手册

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RU30C4C6 数据手册

RU30C4C6

Complementary Advanced Power MOSFET

Features

Pin Description

• N-Channel

30V/4A,

R_{DS (ON)}=20mΩ(Typ.) @ V_GS=10V

R_{DS (ON)}=34mΩ(Typ.) @ V_GS=4.5V

• P-Channel

-30V/-4A,

R_{DS (ON)}=45mΩ (Typ.) @ V_GS=-10V

R_{DS (ON)}=54mΩ (Typ.) @ V_GS=-4.5V

• Uses Ruichips advanced Trench^TMtechnology

• Ultra Low On-Resistance

• Lead Free and Green Devices (RoHS Compliant)

SOT23-6

Applications

• Load Switch

• Power Management

• Battery Protection

Complementary MOSFET

Absolute Maximum Ratings

Parameter

Symbol

N-Channel P-Channel

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

-30

±16

150

Gate-Source Voltage

±16

150

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

°C

T_STG

I_S

-55 to 150 -55 to 150

T_A=25°C

-4

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

-16

-4

I_DP

②

Continuous Drain Current(V_GS=±4.5V)

Maximum Power Dissipation

I_D

3.2

1.3

0.8

TBD

100

-3.2

1.3

P_D

R_JC

0.8

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

TBD

100

°C/W

③

R_JA

Drain-Source Avalanche Ratings

④

E_AS

Avalanche Energy, Single Pulsed

TBD

Shenzhen City Ruichips Semiconductor Co., Ltd

Rev. A– MAY., 2023

www.ruichips.com

12 3 4 5 6 7...9

中文翻译

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