Datasheet > RU3090M

RU3090M

更新时间： 2024-09-14 17:01:23

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
9页	308K
描述
DFN5060

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中文翻译

获取价格

数据手册

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RU3090M 数据手册

RU3090M

N-Channel Advanced Power MOSFET

Features

Pin Description

• 30V/98A,

DS (ON) =1.7mΩ(Typ.)@VGS=10V

DS (ON) =3.2mΩ(Typ.)@VGS=4.5V

• Super High Dense Cell Design

• Reliable and Rugged

• 100% avalanche tested

PDFN5060

• Lead Free and Green Devices Available

(RoHS Compliant)

Applications

• DC/DC Conversion

• Switching Application

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

±20

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

150

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

T_STG

-55 to 150

I_S

T_C=25°C

Mounted on Large Heat Sink

②

380

I_DP

300μs Pulse Drain Current Tested

T_C=25°C

①

③

T_C=100°C

T_A=25°C

T_A=70°C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

I_D

Continuous Drain Current(V_GS=10V)

③

P_D

Maximum Power Dissipation

③

4.2

③

2.7

Rev. A– APR., 2012

www.ruichips.com

12 3 4 5 6 7...9

中文翻译

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