Datasheet > RU306C

RU306C

更新时间： 2024-04-09 19:03:17

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
9页	287K
描述
SOT23-3

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中文翻译

获取价格

数据手册

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RU306C 数据手册

RU306C

N-Channel Advanced Power MOSFET

Features

Pin Description

• 30V/5A,

R^{DS (ON)}=30m (Typ.) @ VGS=10V

R^{DS (ON)}=38m (Typ.) @ VGS=4.5V

R^{DS (ON)}=110m (Typ.) @ VGS=2.5V

• Low R_{DS (ON)}

• Super High Dense Cell Design

• Reliable and Rugged

SOT23-3

• Lead Free and Green Available

Applications

• DC/DC Converter

• Load Switch

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

±12

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

150

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

T_STG

I_S

-55 to 150

1.3

T_A=25°C

Mounted on Large Heat Sink

①

I_DP

300μs Pulse Drain Current Tested

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

I_D

Continuous Drain Current(V_GS=10V)

3.8

1.25

0.8

P_D

Maximum Power Dissipation

②

100

Thermal Resistance-Junction to Ambient

°C/W

R_JA

Rev. A– DEC., 2012

www.ruichips.com

12 3 4 5 6 7...9

中文翻译

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