RU3041M2
N-Channel Advanced Power MOSFET
Features
Pin Description
• 30V/40A,
D
RDS (ON) =4.2mΩ(Typ.)@VGS=10V
RDS (ON) =5.5mΩ(Typ.)@VGS=4.5V
RDS (ON) =10mΩ(Typ.)@VGS=2.5V
• Super High Dense Cell Design
• Fast Switching Speed
• Low gate Charge
D
D
D
G
S
S
S
PIN1
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
PIN1
PDFN3333
D
Applications
• Switching Application Systems
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
30
±20
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
150
°C
°C
A
TSTG
IS
-55 to 150
TC=25°C
40
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
Continuous Drain Current@TC(VGS=10V)
TC=25°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
160
40
A
A
IDP
25
②
ID
14
③
Continuous Drain Current@TA(VGS=10V)
Maximum Power Dissipation@TC
11
31
13
PD
W
3.5
2.3
③
Maximum Power Dissipation@TA
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2016
1
www.ruichips.com