Datasheet > RU30300R

RU30300R

更新时间： 2024-01-01 23:42:56

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
11页	448K
描述
N-Channel Advanced Power MOSFET

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RU30300R 数据手册

RU30300R

N-Channel Advanced Power MOSFET

Features

Pin Description

• 30V/300A,

DS (ON) =1.7mW(Typ.) @ VGS=10V,I_DS=75A

• Ultra Low On-Resistance

• Fast Switching and Fully Avalanche Rated

• 100% avalanche tested

• 175°C Operating Temperature

• Lead Free and Green Available

TO-220

TO-263

TO-220F

TO-247

Applications

• DC/DC Converters

• UPS

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

±20

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

175

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

T_STG

I_S

-55 to 175

300

T_C=25°C

Mounted on Large Heat Sink

①

1200

I_DP

300μs Pulse Drain Current Tested

②

300

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

I_D

Continuous Drain Current

②

210

333

167

0.45

P_D

Maximum Power Dissipation

R_qJC

Thermal Resistance-Junction to Case

°C/W

Drain-Source Avalanche Ratings

③

1120

Avalanche Energy, Single Pulsed

E_AS

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. A– JUN., 2011

www.ruichips.com

12 3 4 5 6 7...11

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