Datasheet > RU30120S

RU30120S

更新时间： 2024-04-09 19:03:24

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	319K
描述
TO-263

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中文翻译

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数据手册

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RU30120S 数据手册

RU30120S

N-Channel Advanced Power MOSFET

Features

Pin Description

• 30V/120A,

R_{DS (ON)}=2.5mΩ(Typ.)@V_GS=10V

R_{DS (ON)}=3.3mΩ(Typ.)@V_GS=4.5V

• Super High Dense Cell Design

• Ultra Low On-Resistance

• 100% Avalanche Tested

• Lead Free and Green Devices Available (RoHS Compliant)

TO263

Applications

• DC-DC Converters

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

±20

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

175

°C

T_STG

I_S

-55 to 175

120

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

480

120

100

150

I_DP

②

Continuous Drain Current(V_GS=10V)

Maximum Power Dissipation

I_D

P_D

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

R_θJC

R_θJA

°C/W

62.5

Drain-Source Avalanche Ratings

③

Avalanche Energy, Single Pulsed

306

E_AS

Ruichips Semiconductor Co., Ltd

Rev. A– DEC., 2013

www.ruichips.com

12 3 4 5 6 7 8

中文翻译

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