RU30100M
N-Channel Advanced Power MOSFET
Features
Pin Description
• 30V/100A,
RDS (ON) =1.3mΩ(Typ.)@VGS=10V
D
D
D
D
RDS (ON) =1.9mΩ(Typ.)@VGS=4.5V
• Ultra Low On-Resistance
• Fast Switching Speed
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
G
S
S
S
PIN1
PIN1
PDFN5060
D
Applications
• DC/DC Converters
• On board power for server
• E-cigarettes
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
30
±20
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
150
°C
°C
A
TSTG
IS
-55 to 150
50
TC=25°C
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
TC=25°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
300
100
63
A
A
IDP
Continuous Drain Current@TC(VGS=10V)
②
ID
27
③
Continuous Drain Current@TA(VGS=10V)
Maximum Power Dissipation@TC
21
62.5
40
PD
W
4.2
2.7
③
Maximum Power Dissipation@TA
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– Jul., 2018
1
www.ruichips.com