Datasheet > RU2HE2D

RU2HE2D

更新时间： 2024-01-01 14:29:10

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	242K
描述
N-Channel Advanced Power MOSFET

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中文翻译

获取价格

数据手册

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RU2HE2D 数据手册

RU2HE2D

N-Channel Advanced Power MOSFET

Features

Pin Description

• 200V/1.2A,

DS (ON) =0.95W(Typ.) @ VGS=10V

DS (ON) =1W(Typ.) @ VGS=4.5V

• ESD Protected

• Reliable and Rugged

• Fast Switching

SOT-223

• Lead Free and Green Available

Applications

• Power Management

• DC-DC Converter

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

200

±20

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

150

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

T_STG

I_S

-55 to 150

T_A=25°C

Mounted on Large Heat Sink

I_DP

300μs Pulse Drain Current Tested

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

4.5

①

1.2

I_D

Continuous Drain Current

0.9

2.5

P_D

Maximum Power Dissipation

1.6

②

R_qJA

Thermal Resistance-Junction to Ambient

°C/W

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. B – JUL., 2011

www.ruichips.com

12 3 4 5 6 7 8

中文翻译

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