Datasheet > RU2H30Q

RU2H30Q

更新时间： 2024-01-21 03:55:28

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
11页	438K
描述
N-Channel Advanced Power MOSFET

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数据手册

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RU2H30Q 数据手册

RU2H30Q

N-Channel Advanced Power MOSFET

Features

Pin Description

• 200V/30A,

DS (ON) =75mW(Typ.) @ VGS=10V

• Ultra Low On-Resistance

• Fast Switching and Fully Avalanche Rated

• 100% avalanche tested

• 175°C Operating Temperature

• Lead Free and Green Available

TO-220

TO-220F

TO-247

TO-263

Applications

• Switching Application Systems

• DC/DC Converters

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

200

±25

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

175

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

T_STG

I_S

-55 to 175

T_C=25°C

Mounted on Large Heat Sink

①

120

I_DP

300μs Pulse Drain Current Tested

T_C=25°C

②

I_D

Continuous Drain Current

②

T_C=100°C

T_C=25°C

T_C=100°C

180

P_D

Maximum Power Dissipation

0.83

R_qJC

Thermal Resistance-Junction to Case

°C/W

Drain-Source Avalanche Ratings

③

E_AS

Avalanche Energy, Single Pulsed

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. A– JUL., 2011

www.ruichips.com

12 3 4 5 6 7...11

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