Datasheet > RU2H100Q

RU2H100Q

更新时间： 2024-04-09 19:00:37

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	416K
描述
TO-247

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中文翻译

获取价格

数据手册

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RU2H100Q 数据手册

RU2H100Q

N-Channel Advanced Power MOSFET

Features

Pin Description

• 200V/100A,

R_{DS (ON)}=26mΩ(Typ.)@V_GS=10V

• Low On-Resistance

• Fast Switching

• 100% Avalanche Tested

• 175°C Operating Temperature

• Lead Free and Green Devices Available (RoHS Compliant)

Applications

TO247

• Switching Application

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

200

±25

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

175

°C

T_STG

I_S

-55 to 175

100

T_C=25°C

Mounted on Large Heat Sink

①

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

300μs Pulse Drain Current Tested

400

100

I_DP

②

Continuous Drain Current(V_GS=10V)

Maximum Power Dissipation

I_D

417

208

0.36

P_D

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

R_JC

R_JA

°C/W

Drain-Source Avalanche Ratings

③

Avalanche Energy, Single Pulsed

144

E_AS

Ruichips Semiconductor Co., Ltd

Rev. A– APR., 2015

www.ruichips.com

12 3 4 5 6 7 8

中文翻译

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