Datasheet > RU20P4C6

RU20P4C6

更新时间： 2024-09-20 17:01:27

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	361K
描述
SOT23-6

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中文翻译

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数据手册

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RU20P4C6 数据手册

RU20P4C6

P-Channel Advanced Power MOSFET

Features

Pin Description

• -20V/-4A,

R_{DS (ON)}=35mΩ(Typ.)@V_GS=-4.5V

R_{DS (ON)}=45mΩ(Typ.)@V_GS=-2.5V

• Low On-Resistance

• Super High Dense Cell Design

• Reliable and Rugged

• Lead Free and Green Devices Available (RoHS Compliant)

SOT23-6

Applications

• Load Switch

• Power Management

• Battery Protection

P-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

-20

±10

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

150

°C

T_STG

I_S

-55 to 150

T_A=25°C

-1.2

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

-16

-4

I_DP

②

Continuous Drain Current(V_GS=-10V)

Maximum Power Dissipation

I_D

-3.2

1.3

0.8

P_D

R_JC

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

°C/W

③

100

R_JA

Drain-Source Avalanche Ratings

④

E_AS

Avalanche Energy, Single Pulsed

TBD

Ruichips Semiconductor Co., Ltd

Rev. B– AUG., 2015

www.ruichips.com

12 3 4 5 6 7 8

中文翻译

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