Datasheet > RU20D40M3

RU20D40M3

更新时间： 2024-04-09 19:02:46

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	1171K
描述
DFN3030

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中文翻译

获取价格

数据手册

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RU20D40M3 数据手册

RU20D40M3

Dual Symmetric N-Channel MOSFET

Features

Pin Description

• 20V/30A,

R_{DS (ON)}=5mΩ(Typ.)@V_GS=4.5V

R_{DS (ON)}=7.5mΩ(Typ.)@V_GS=2.5V

• Fast Switching Speed

• Low gate Charge

• 100% avalanche tested

• Lead Free and Green Devices Available (RoHS Compliant)

SDFN3030

Applications

• Switching Application Systems

• DC/DC Converters

Dual N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

±12

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

150

°C

T_STG

I_S

-55 to 150

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

100

I_DP

Continuous Drain Current@T_C(V_GS=4.5V)

②

I_D

10.6

8.4

③

Continuous Drain Current@T_A(V_GS=4.5V)

Maximum Power Dissipation@T_C

9.6

3.2

P_D

③

Maximum Power Dissipation@T_A

Shenzhen City Ruichips Semiconductor Co., Ltd

Rev. A– MAR., 2017

www.ruichips.com

12 3 4 5 6 7 8

中文翻译

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