Datasheet > RU1HL13R

RU1HL13R

更新时间： 2024-10-15 17:01:23

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
9页	300K
描述
TO-220

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中文翻译

获取价格

数据手册

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RU1HL13R 数据手册

RU1HL8L

P-Channel Advanced Power MOSFET

Features

Pin Description

• -100V/-8A,

R^{DS (ON)}=350mΩ(Typ.)@VGS=-10V

RDS (ON) =400mΩ(Typ.)@VGS=-4.5V

• Super High Dense Cell Design

• ESD protected

• Reliable and Rugged

• 100% avalanche tested

TO252

• Lead Free and Green Devices Available

(RoHS Compliant)

Applications

• Power Management

• DC/DC Converters

P-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

-100

±16

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

175

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

T_STG

I_S

-55 to 175

-8

T_C=25°C

Mounted on Large Heat Sink

①

-32

I_DP

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

-8

I_D

Continuous Drain Current(V_GS=-10V)

-6

P_D

Maximum Power Dissipation

3.75

R_JC

Thermal Resistance-Junction to Case

°C/W

Drain-Source Avalanche Ratings

②

Avalanche Energy, Single Pulsed

E_AS

Rev. B– JUN., 2014

www.ruichips.com

12 3 4 5 6 7...9

中文翻译

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