Datasheet > RU1HE3H

RU1HE3H

更新时间： 2024-10-14 09:42:03

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
9页	269K
描述
N-Channel Advanced Power MOSFET

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中文翻译

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数据手册

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RU1HE3H 数据手册

RU1HE3H

N-Channel Advanced Power MOSFET

Features

Pin Description

• 100V/3A,

DS (ON) =135mW(Typ.) @ VGS=10V

DS (ON) =150mW(Typ.) @ VGS=4.5V

• Super High Dense Cell Design

• Reliable and Rugged

• ESD Protected

SOP-8

• Lead Free and Green Available

Applications

• Converters

• LED Backlight

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

100

±20

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

150

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

T_STG

I_S

-55 to 150

T_A=25°C

Mounted on Large Heat Sink

①

I_DP

300μs Pulse Drain Current Tested

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

I_D

Continuous Drain Current

2.4

2.5

P_D

Maximum Power Dissipation

1.6

②

R_qJA

Thermal Resistance-Junction to Ambient

°C/W

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. A– JUL., 2011

www.ruichips.com

12 3 4 5 6 7...9

中文翻译

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