Datasheet > RU1HE16L

RU1HE16L

更新时间： 2024-10-14 09:42:03

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
9页	284K
描述
N-Channel Advanced Power MOSFET

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中文翻译

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数据手册

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RU1HE16L 数据手册

RU1HE16L

N-Channel Advanced Power MOSFET

Features

Pin Description

• 100V/16A,

DS (ON) =70mΩ(tpy.)@VGS=10V

DS (ON) =85mΩ(tpy.)@VGS=4.5V

• Super High Dense Cell Design

• ESD protected

• Reliable and Rugged

TO252

• Lead Free and Green Devices Available

(RoHS Compliant)

Applications

• Power Management.

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

100

±20

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

175

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

T_STG

I_S

-55 to 175

T_C=25°C

Mounted on Large Heat Sink

①

I_DP

300μs Pulse Drain Current Tested

②

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

I_D

Continuous Drain Current

P_D

Maximum Power Dissipation

R_qJC

Thermal Resistance-Junction to Case

°C/W

Drain-Source Avalanche Ratings

③

Avalanche Energy, Single Pulsed

E_AS

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. A– FEB., 2011

www.ruichips.com

12 3 4 5 6 7...9

中文翻译

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