生命周期: | Not Recommended | 包装说明: | O-PALF-W2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.62 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-PALF-W2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 最低工作温度: | -40 °C |
最大输出电流: | 0.2 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
认证状态: | Not Qualified | 最大反向恢复时间: | 0.4 µs |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | AXIAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RU1DGF | GULFSEMI |
获取价格 |
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:600V CURRENT: 1.0A | |
RU1E002SP | ROHM |
获取价格 |
4V Drive Pch MOSFET | |
RU1H100Q | RUICHIPS |
获取价格 |
N-Channel Advanced Power MOSFET | |
RU1H100R | RUICHIPS |
获取价格 |
N-Channel Advanced Power MOSFET | |
RU1H100S | RUICHIPS |
获取价格 |
N-Channel Advanced Power MOSFET | |
RU1H130R | RUICHIPS |
获取价格 |
N-Channel Advanced Power MOSFET | |
RU1H180S | RUICHIPS |
获取价格 |
TO-263 | |
RU1H190R | RUICHIPS |
获取价格 |
N-Channel Advanced Power MOSFET | |
RU1H190S | RUICHIPS |
获取价格 |
N-Channel Advanced Power MOSFET | |
RU1H20H | RUICHIPS |
获取价格 |
SOP-8 |