Datasheet > RU190N08R

RU190N08R

更新时间： 2024-10-14 09:42:03

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
11页	389K
描述
N-Channel Advanced Power MOSFET

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RU190N08R 数据手册

RU190N08

N-Channel Advanced Power MOSFET

Features

Pin Description

· 80V/190A

RDS (ON)=3.9mW(Typ.) @ VGS=10V

·Avalanche Rated

TO-220

TO-263

TO-220F

TO-247

· Reliable and Rugged

· Lead Free and Green Devices Available

Applications

·Automotive applications and a wide

variety of other applications

·High Efficiency Synchronous in SMPS

·High Speed Power Switching

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (TA=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

±25

Gate-Source Voltage

°C

175

Maximum Junction Temperature

-55 to 175

T_STG

Storage Temperature Range

Diode Continuous Forward Current

TC=25°C

190

Mounted on Large Heat Sink

①

I_DP

I_D

T =25°C

TC=25°C

300ms Pulsed Drain Current Tested

700

②

190

Continue Drain Current

TC=100°C

TC=25°C

TC=100°C

140

400

P_D

Maximum Power Dissipation

220

RqJC

RqJA

Thermal Resistance -Junction to Case

Thermal Resistance-Junction to Ambient

0.45

°C/W

62.5

Drain-Source Avalanche Ratings

EAS

Avalanche Energy ,Single Pulsed

2000

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. C – JAN., 2010

www.ruichips.com

12 3 4 5 6 7...11

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