Datasheet > RU16P8M4

RU16P8M4

更新时间： 2024-11-26 17:01:47

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	311K
描述
DFN2020

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中文翻译

获取价格

数据手册

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RU16P8M4 数据手册

RU16P8M4

P-Channel Advanced Power MOSFET

Features

Pin Description

• -16V/-8A,

R_{DS (ON)}=40mΩ(Typ.)@V_GS=-4.5V

R_{DS (ON)}=65mΩ(Typ.)@V_GS=-2.5V

• Super High Dense Cell Design

• Fast Switching Speed

• Reliable and Rugged

• Lead Free and Green Devices Available (RoHS Compliant)

PIN1

SDFN2020

Applications

• Load Swtich

• Battery Charge

• DC/DC Converters

P-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

-16

±12

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

150

°C

T_STG

I_S

-55 to 150

-14

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

-56

-14

-9

I_DP

Continuous Drain Current@T_C(V_GS=-4.5V)

②

I_D

-8

③

Continuous Drain Current@T_A(V_GS=-4.5V)

Maximum Power Dissipation@T_C

-5.6

17.8

7.1

2.5

1.6

P_D

③

Maximum Power Dissipation@T_A

Ruichips Semiconductor Co., Ltd

Rev. A– MAY., 2013

www.ruichips.com

12 3 4 5 6 7 8

中文翻译

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