Datasheet > RU140N10R

RU140N10R

更新时间： 2024-11-25 09:42:03

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
11页	453K
描述
N-Channel Advanced Power MOSFET

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数据手册

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RU140N10R 数据手册

RU140N10

N-Channel Advanced Power MOSFET

Features

Pin Description

• 100V/140A

RDS (ON)=6.5mW(Typ.) @ VGS=10V

• Ultra Low On-Resistance

• Low Gate Charge

TO-220

TO-247

TO-220F

TO-263

• Fast Switching and Fully Avalanche Rated

• 100% avalanche tested

Applications

·Switching applications

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (TA=25°C Unless Otherwise Noted)

100

±25

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

175

°C

Maximum Junction Temperature

T_STG

Storage Temperature Range

-55 to 175

①

Diode Continuous Forward Current

TC=25°C

140

Mounted on Large Heat Sink

②

560

T_C=25°C

TC=25°C

TC=100°C

I_DP

300ms Pulsed Drain Current Tested

①

140

I_D

Continue Drain Current

①

100

TC=25°C

250

125

0.6

P_D

Maximum Power Dissipation

TC=100°C

RqJC

RqJA

Thermal Resistance -Junction to Case

Thermal Resistance-Junction to Ambient

°C/W

62.5

Drain-Source Avalanche Ratings

③

Avalanche Energy ,Single Pulsed

1.1

EAS

CopyrightÓ Ruichips Semiconductor Co., Ltd

www.ruichips.com

Rev.A –SEP., 2010

12 3 4 5 6 7...11

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