Datasheet > RTP21070-20

RTP21070-20

更新时间： 2024-09-17 11:59:23

品牌	Logo	应用领域
RFHIC		/
页数	文件大小	规格书
6页	411K
描述
The RTP21070-20 is designed for RF system application frequencies from 2110MHz to 2170MHz, with high gain.

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RTP21070-20 数据手册

Preliminary

GaN-SiC Pallet Amplifier

RTP21070-20

Product Features

Application

• Doherty amplifier design

• LTE, WCDMA DPD amplifier

• GaN on SiC HEMT

• General purpose RF amplifier

• Small and light weight

• 50 Ohm Input/Output impedance matched

• Highly reliable and rugged design

• High efficiency, High Gain

• 70W typical P_AVG

Description

The RTP21070-20 is designed for RF system application frequencies from 2110MHz to 2170MHz, with high gain.

This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high

efficiency. The RTP21070-20 is DPD application amplifier.

Electrical Specifications @ VDD=+48VDC, T=25°C, 50Ω

System

PARAMETER

Symbol

Min

2110

Typ

Max

Unit

MHz

dBm

MHz

dBm

P_AVG

SBW

P_sat

2170

Frequency Range

Output Power

48.5

Instantaneous Bandwidth

Output Power @ Psat G.C.P

Small Signal Gain

56.0

SSG

ΔG

± 0.5

± 3.0

-25

-57

± 1.0

Small Signal Gain Flatness

Gain Variation

ΔGt

ACLR @ WCDMA 5MHz 4FA^※1

ACLR with DPD

ACLR

dBc

dBm

Volt

Forward Coupling Level

Operating Voltage 1

VDC1

VDC2

5.6

Operating Voltage 2

Chain Efficiency^※2@ Pout 77.6W

Pallet Efficiency @ Pout 70.8W

Input Port Return Loss

Output Port Return Loss

IRL

-13

-15

-18

ORL

※1 Test Signal Condition: WCDMA 5MHz 4FA(PAR 7.5dB), Test DPD solution: Optichron DPD(OP6180)

※2 Chain Efficiency is an entire operating transistor efficiency excluded isolator and coupler.

Environmental Characteristics

PARAMETER

Operating Temperature

Storage Temperature

Symbol

Min

-40

Typ

Max

+60

Unit

°C

-45

+90

°C

▪ Tel : 82-31-250-5078

▪ rfsales@rfhic.com

▪ All specifications may change without notice.

▪ Version 0.2

12 3 4 5 6

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