Datasheet > RTP18050-S1

RTP18050-S1

更新时间： 2024-09-17 11:59:23

品牌	Logo	应用领域
RFHIC		/
页数	文件大小	规格书
4页	224K
描述
The RTP18050-S1 is designed for RF system application frequencies from 1830MHz to 1860MHz, with high gain.

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RTP18050-S1 数据手册

Preliminary

GaN-SiC Pallet Amplifier

RTP18050-S1

Product Features

Application

• Doherty amplifier design

• CDMA & LTE DPD amplifier

• GaN on SiC HEMT

• General purpose RF amplifier

• Small and light weight

• 50 Ohm Input/Output impedance matched

• Highly reliable and rugged design

• High efficiency, High Gain

• 50W typical P_AVG

Description

The RTP18050-S1 is designed for RF system application frequencies from 1830MHz to 1860MHz, with high gain.

This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high

efficiency. The RTP18050-S1 is a CDMA & LTE DPD application amplifier.

Electrical Specifications @ VDD=+31VDC, T=25°C, 50Ω

System

PARAMETER

Frequency Range

Symbol

Min

Typ

Max

Unit

MHz

dBm

P_AVG

P_sat

1830

1860

Output Power

55.5

Output Power @ Psat G.C.P

Small Signal Gain

SSG

ΔG

± 1.0

± 3.0

-33

-59

-38

± 2

Small Signal Gain Flatness

Gain Variation

ΔGt

ACLR

-30

-39

dBc

ACLR @ LTE 10MHz 1FA

ACLR with DPD

-37

Forward Coupling

VDC

Volt

Operating Voltage

Efficiency @ Pout 50Watt

※ Test Signal Condition : LTE 10MHz 1FA (PAR 7.5dB), Test DPD solution : Optichron DPD

Environmental Characteristics

PARAMETER

Operating Temperature

Storage Temperature

Symbol

Min

-30

Typ

Max

+60

Unit

°C

T^c

-40

+90

°C

Mechanical Specifications

PARAMETER

Value

Units

Limits

Max

140 x 170 x 20

695

Dimensions ( L x W x H )

Weight

Typical

SMA Female/SMA Female/SMA Female

5569-08(8pin), 5267-03A(3pin)

External Heat sink + airflow

RF Connectors In/Out/Coupling

DC Connectors / Controls

Cooling

▪ Tel : 82-31-250-5078

▪ rfsales@rfhic.com

▪ All specifications may change without notice.

▪ Version 0.1

12 3 4

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