Datasheet > RTM2302CX

RTM2302CX

更新时间： 2024-02-27 07:10:09

品牌	Logo	应用领域
SIRECT		/
页数	文件大小	规格书
4页	182K
描述
20V N-Channel Enhancement Mode MOSFET

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中文翻译

获取价格

数据手册

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RTM2302CX 数据手册

E L E C T R O N I C

RTM2302

20V N-Channel Enhancement Mode MOSFET

V_DS= 20V

Pin assignment:

1. Gate

2. Source

3. Drain

R_{DS (on)}, Vgs @ 4.5V, Ids @ 3.6A = 65mΩ

R_{DS (on)}, Vgs @ 2.5V, Ids @ 3.1A = 95mΩ

Features

Advanced trench process technology

Excellent thermal and electrical capabilities

Compact and low profile SOT-23 package

High density cell design for ultra low on-resistance

Block Diagram

Ordering Information

Part No.

Packing

Package

RTM2302CX

Tape & Reel

SOT-23

Absolute Maximum Rating (Ta = 25℃ unless otherwise noted)

Parameter

Symbol

Limit

20V

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Maximum Power Dissipation

V_DS

V_GS

I_D

± 8

2.4

I_DM

P_D

Ta = 25 ^oC

Ta = 75 ^oC

1.25

0.8

Operating Junction Temperature

T_J

+150

- 55 to +150

^oC

Operating Junction and Storage Temperature Range

T_J, T_STG

Thermal Performance

Parameter

Symbol

T_L

Limit

Unit

Lead Temperature (1/8” from case)

Junction to Ambient Thermal Resistance (PCB mounted)

Note: Surface mounted on FR4 board t<=5sec.

Rθja

100

^oC/W

http:// www.sirectsemi.com

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中文翻译

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