Datasheet > RTM2301CX

RTM2301CX

更新时间： 2022-12-17 00:32:46

品牌	Logo	应用领域
SIRECT		/
页数	文件大小	规格书
4页	183K
描述
20V P-Channel Enhancement Mode MOSFET

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中文翻译

获取价格

数据手册

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RTM2301CX 数据手册

E L E C T R O N I C

RTM2301

20V P-Channel Enhancement Mode MOSFET

V_DS= - 20V

Pin assignment:

1. Gate

R_{DS (on)}, Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ

R_{DS (on)}, Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ

2. Source

3. Drain

Features

Advanced trench process technology

Excellent thermal and electrical capabilities

Compact and low profile SOT-23 package

High density cell design for ultra low on-resistance

Block Diagram

Ordering Information

Part No.

Packing

Package

RTM2301CX

Tape & Reel

SOT-23

Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)

Parameter

Symbol

Limit

- 20V

± 8

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Maximum Power Dissipation

V_DS

V_GS

I_D

- 2.3

I_DM

P_D

- 10

Ta = 25 ^oC

Ta = 75 ^oC

1.25

0.8

Operating Junction Temperature

T_J

+150

^oC

Operating Junction and Storage Temperature Range

T_J, T_STG

- 55 to +150

Thermal Performance

Parameter

Symbol

T_L

Limit

Unit

Lead Temperature (1/8” from case)

Junction to Ambient Thermal Resistance (PCB mounted)

Note: Surface mounted on FR4 board t<=5sec.

Rθja

100

^oC/W

http:// www.sirectsemi.com

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