BCD RTD
100mA SILICON CARTRIDGE RECTIFIERS
SMALL SIZE MOLDED PACKAGE
PRV 8,000 TO 60,000 VOLTS
FAST RECOVERY (RTD SERIES)
LOW LEAKAGE
Peak
Max. Forward Voltage
EDI Type
Number
Leng th
L
o
Reve rse Volta ge
PRV (Volts )
Drop at 25 C And 100 mA
Fig. 3
VF (Vol ts)
STANDARD RECOVERY
BCD08
BCD10
BCD12
BCD15
BCD20
BCD25
BCD30
BCD35
BCD40
BCD45
BCD50
BCD60
8,000
10,0 00
12,0 00
15,0 00
20,0 00
25,000
30,0 00
35,0 00
40,0 00
45,0 00
50,0 00
60,0 00
13
13
13
20
26
33
40
46
53
60
66
73
1.00
1.00
1.00
1.63
2.13
2.63
3.13
3.63
4.13
4.63
5.13
6.13
200 NANOSE COND RECOVE RY (F IG.4)
RTD08
RTD10
RTD12
RTD15
RTD20
RTD25
RTD30
RTD35
RTD40
RTD45
RTD50
RTD60
8,000
10,0 00
12,0 00
15,0 00
20,0 00
25,0 00
30,0 00
35,0 00
40,0 00
45,0 00
50,0 00
60,0 00
20
20
1.00
1.00
1.00
1.63
2.13
2.63
3.13
3.63
4.13
4.63
5.13
6.13
20
30
40
50
60
70
80
90
100
110
RTD SERIES
FAST
BCD SERIES
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
STANDARD
RECOVERY
(at TA
=25 C Unless Otherwise Specified)
(at T
A
=25 C Unless Otherwise Specified)
RECOVERY
o
o
Max. DC Reverse Current@ PRV and25 C, I
A
2
C, I
A
2
Max. DC Reverse Current @ PRV and 25
Max. DC Reverse Current@ PRV and100
Max. Reverse Recovery Time , Trr (Fig.4)
R
R
o
o
C, I
A
C, I
Max. DC Reverse Current@ PRV and100
A
R
100
R
100
o
o
to +125
C
Ambient Operating Temperature Range,T
A
200 nanosec
-55
-55
C
o
o
to +150
C
o
o
to +125
C
Ambient Operating Temperature Range,TA
Storage Temperature Range, T
STG
C
-55
-55
C
o
o
to +150
C
Max.One-Half Cycle Surge Current,
IFM
Storage Temperature Range, T
STG
C
Amps
10
(Surge )@ 60Hz
Max.One-HalfCycle Surge Current,
IFM
10 Amps
(Surge )@ 60Hz
Forward Current Repetitive Peak,I FRM
Amps
3
Amps
3
Forward Current Repetitive Peak,IFRM
EDI reserves the right to change these specifications at any time without notice.