RT9532H
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
R
/K
EOC EOC
End of Charge Current (EOC)
IEOC Setting Current
--
70
180
--
--
%
μA
Ω/%
mV
V
75
200
280
1.5
--
I
80
EOC
IEOC Setting K
EOC
220
512
--
VIN Power FET R
ISET Set Voltage
I
= 1A
DS(ON)
OUT
V
--
ISET
ISET Short Protect Threshold
320
460
Ω
ISET Short Protect Deglitch
Time
--
--
1.5
2
--
--
ms
A
ISET Short Protect Maximum
Current
As ISET Mode, R
= 530
0.9
90
380
--
1
95
395
200
--
1.1
100
415
--
A
ISET
VIN Charge Current
I
As USB100 Mode
As USB500 Mode
mA
mA
kΩ
CHRG
EN/SET Pull Low Resistor
Logic-High
EN/SET
1.4
--
--
V
V
IH
V
Voltage
Logic-Low
--
0.4
6
IL
LDO On-Resistance
LDO Output Voltage
R
3
Ω
DS(ON)
V
LDO
4.75
60
4.9
5
V
LDO Maximum Output
Current
120
4.35
--
180
4.437
--
mA
V
Factory Mode V
4.263
2.3
OUT
Factory Mode Maximum
Output Current
A
EN/SET Off Time
Timer to disable chip
1.5
1.5
--
--
--
--
--
ms
ms
μs
EN/SET Lock Time
Timer to lock pulse count
--
Logic-High Duration
100
100
700
700
EN/SET
Logic-Low Duration
μs
Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions may affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. The device is not guaranteed to function outside its operating conditions.
Copyright 2023 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS9532H-02 September 2023
www.richtek.com
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