Datasheet > RT8H255C

RT8H255C

更新时间： 2024-09-17 12:31:19

品牌	Logo	应用领域
谏早电子 - ISAHAYA		驱动器栅极双极性晶体管栅极驱动
页数	文件大小	规格书
5页	211K
描述
IGBT Gate Driver

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中文翻译

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数据手册

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RT8H255C 数据手册

<Multi-Function Transistor>

RT8H255C

IGBT Gate Driver

DESCRIPTION

Unit:mm

PIN CONFIGURATION

RT8H255C is a integrating IGBT gate drive circuit.

This product can drive IGBT with two external transistors.

GATEIN terminal have hysteresis input voltage.

Case of “L→H” propagation, B terminal output low signal

at over 2.80V. Case of “H→L” propagation, B terminal

output high signal at under 2.48V.

2.8±0.1

0.65±0.2 1.50±0.1 0.65±0.2

①

②

⑥

⑤

④

FEATURE

The miniaturization of a set and high-density mounting

③

are possible.

APPLICATION

IGBT Gate Driver

Outline

①A

②B

③VCC

④GATEIN

⑤GND

⑥DI

2 5 5

１

BLOCK DIAGRAM

VCC

GATEIN

Driver

Reference

voltage

GND

100621

12 3 4 5

中文翻译

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