Datasheet > RT5N431C

RT5N431C

更新时间： 2024-09-21 03:29:35

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体电阻器晶体管
页数	文件大小	规格书
3页	58K
描述
Transistor With Resistor

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中文翻译

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数据手册

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RT5N431C 数据手册

RT5N431C

Transistor With Resistor

For Switching Application

Silicon NPN Epitaxial Type

OUTLINE DRAWING

Unit: mm

DESCRIPTION

RT5N431C is a one chip transistor with built-in bias

2.5

1.5

resistor.

0.5

FEATURE

Built-in bias resistor （R₁=4.7kΩ, R₂=4.7kΩ）

High collector current （Ic=0.5A）

Mini package for easy mounting

①

②

③

APPLICATION

Inverted circuit, Switching circuit, Interface circuit,

Driver circuit

③

(OUT)

JEITA：SC-59

①

①：BASE

(IN)

②：EMITTER

③：COLLECTOR

②

(GND)

MAXIMUM RATING (Ta=25℃)

SYMBOL

PARAMETER

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

RATING

UNIT

MARKING

V_CBO

V_EBO

V_CEO

I_C

-10

500

N ３

℃

P_C

Collector dissipation(Ta=25℃)

Junction temperature

Storage temperature

200

＋150

T_j

-55～＋150

℃

T_stg

ELECTRICAL CHARACTERISTICS (Ta=25℃)

LIMIT

SYMBOL

PARAMETER

TEST CONDITION

UNIT

MIN

TYP

―

MAX

V_CE=0.3V，I_C=20mA

_CE=5V，I_C=100μA

―

0.5

―

V _I(on)

Input on voltage

Input off voltage

―

V _I(off)

V_CE(sat)

I_BE

I_C=50mA，I_B=2.5mA

0.1

―

0.3

1.8

0.5

―

C to E saturation voltage

B to E current

Collector cut off current

DC forward current gain

Input resistor

―

V_EB=5V

μA

―

_CE=50V，V_BE=0V

―

I_CES

G_I

V_CE=5V，I_E=50mA

―

kΩ

R₁

3.29

0.8

―

4.7

6.11

1.2

―

R₂/R₁

f_T

Resistor ratio

Gain band width product

_CE=10V，I_E=-5mA，f=100MHz

200

MHz

ISAHAYA ELECTRONICS CORPORATION

12 3

中文翻译

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