Datasheet > RT550PD

RT550PD

更新时间： 2024-09-25 06:08:51

品牌	Logo	应用领域
RFHIC		晶体晶体管
页数	文件大小	规格书
2页	149K
描述
Power Transistor

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中文翻译

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RT550PD 数据手册

Power Transistor

RT550PD

Product Features

Application

• High Output Power

P1dB = 40dBm(typ)@2.3GHz

• High Efficiency

• Repeater

• RF Sub-Systems

• Base Station

• Converter

• High Power Gain

G1dB = 10dB(typ) @2.3GHz

• High Linearity

• MMDS

• Hermetically sealed package

• Competitive Price

Package Type : WP-22

Description

The RT550PD is designed for base stations and cell extenders as 300MHz ~ 3GHz.

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Drain - Source Voltage

Gate - Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Vds

Vgs

+12

-5V~0V

℃

Tstg

Tch

-65 ~ +200

175

Electrical Characteristics (Ta=+25℃)

Parameter

Symbol Test Conditions Min Typ Max Unit

Saturated Drain Current

Transconductance

Idss

Vds=3V, Vgs=0V

Vds=3V, Ids=3600mA

Vds=3v, Ids=360mA

5000

6700

3300

-1.9

Pinch-off Voltage

-1.6

-20

-3.5

-25

Breakdown Voltage Gate-Source

Breakdown Voltage Gate-Drain

Output Power @ 1dB G.C.P

Linear Power Gain

Bvgs

Bvgd

P1dB

GLP

ηadd

Rth

4.0

dBm

Vds=9V, Id=2.4A

F=2.3GHz

Power added efficiency @ 1dB

Thermal Resistance (Channel to Case)

4.5

℃/W

▪ All specifications may change without notice.

▪ Version 5.2

▪ Tel : 82-31-250-5011

▪ rfsales@rfhic.com

中文翻译

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