Datasheet > RT3AMMAM1F

RT3AMMAM1F

更新时间： 2024-01-11 09:26:13

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
4页	168K
描述
Transistor

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技术参数
数据手册

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RT3AMMAM1F 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

RT3AMMAM1F 数据手册

PRELIMINARY

RT3AMMAM1

Composite Transistor

For Low Frequency Amplify Application

Silicon Pnp Epitaxial Type

DESCRIPTION

OUTLINE DRAWING

Unit：mm

RT3AMMAM1 is compound transistor built with two

ISA1235A chips in SC-88 package.

FEATURE

Silicon PNP epitaxial type

Each transistor elements are independent.

Mini package for easy mounting.

APPLICATION

For low frequency amplify application.

TERMINAL

CONNECTOR

①：EMITTER1

②：BASE1

Tr1

③：COLLECTOR2

④：EMITTER2

⑤：BASE2

Tr2

⑥:COLLECTOR1

JEITA：SC-88

MAXIMUM RATING (Ta=25℃) (Tr1 , Tr2.)

SYMBOL

PARAMETER

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

RATING

-60

UNIT

MARKING

CBO

EBO

CEO

-6

-50

-200

℃

AAF

Collector dissipation（Total,Ta=25℃）

Junction temperature

150

＋150

-55～＋150

℃

Storage temperature

stg

１

ISAHAYA ELECTRONICS CORPORATION

12 3 4

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