Datasheet > RT1A040ZP

RT1A040ZP

更新时间： 2024-01-20 07:45:32

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	220K
描述
1.5V Drive Pch MOSFET

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中文翻译

获取价格

数据手册

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RT1A040ZP 数据手册

1.5V Drive Pch MOSFET

RT1A040ZP

zStructure

zDimensions (Unit : mm)

Silicon P-channel MOSFET

TSST8

(8) (7) (6) (5)

zFeatures

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

(1) (2) (3) (4)

Abbreviated symbol : YE

Each lead has same dimensions

zApplications

Switching

zPackaging specifications

zEquivalent circuit

(8)

(7)

(6)

(5)

Package

Taping

Type

Code

∗2

Basic ordering unit(piecies)

3000

RT1A040ZP

∗1

(1) Drain

(2) Drain

(3) Drain

(4) Gate

(5) Source

(6) Drain

(7) Drain

(8) Drain

(1)

(2)

(3)

(4)

*1 ESD PROTECTION DIODE

*2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Drain-source voltage

−12

Gate-source voltage

Continuous

Drain current

Pulsed

∗1

I_DP

I_S

Continuous

Pulsed

−1

−16

Source current

(Body diode)

∗1

I_SP

∗2

Total power dissipation

Channel temperature

P_D

1.25

°C

Tch

Tstg

150

Range of Storage temerature

−55 to +150

∗1 Pw 10µs, Duty cycle 1%

∗2 When mounted on a ceramic board

zThermal resistance

Parameter

Symbol

Rth(ch-a)^∗

Limits

100

Unit

Channel to ambient

°C / W

∗ When mounted on a ceramic board

www.rohm.com

2009.01 - Rev.A

1/5

12 3 4 5 6

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