Datasheet > RSM92N650T7

RSM92N650T7

更新时间： 2024-11-18 18:09:59

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1527K
描述
Vdss (V) : 650 V;Id @ 25C (A) : 92 A;Rds-on (typ) (mOhms) : 20 mOhms;Total Gate Charge (nQ) typ : 49 nQ;Maximum Power Dissipation (W) : 312 W;Vgs(th) (typ) : 2.6 V;Input Capacitance (Ciss) : 3180 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-247-3;Type : SiC

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RSM92N650T7 数据手册

RSM92N650T7

N-Channel SiC Power MOSFET

Features

 High Blocking Voltage with Low On Resistance

 High Speed Switching with Low Capacitance

 Easy to Parallel and Simple to Drive

V_DS

650

mΩ

R_DS(on)

I_D@25℃

Benefits

 Higher System Efficiency

 Reduced Cooling Requirements

 Increased Power Density

Package

 Increased System Switching Frequency

Applications

 EV Charging

 Server Power Supplies

 Solar PV Inverters

 UPS

 DC/DC Converters

 Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RSM92N650T7

TO-247-3

TBD

Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Value

650

Unit

Test Conditions

Note

V_DSmaxDrain-Source Voltage

V_GSmaxGate-Source Voltage

V_GS=0V, I_D=100μA

-8/+22

-4/+18

Absolute maximum values

V_GSop

Gate-Source Voltage

Recommended operational values

_GS=18V, T_c=25℃

I_D

Continuous Drain Current

V_GS=18V, T_c=100℃

I_D(pulse)Pulsed Drain Current

257

Pulse width t_plimited by T_Jmax

T_c=25℃, T_J=175℃

P_D

Power Dissipation

312

Operating Junction and Storage

Temperature

T_J, T_STG

-55 to +175

℃

2023-03/110

REV:O

12 3 4 5 6 7

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