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RSM72N170T7 PDF预览

RSM72N170T7

更新时间: 2024-10-15 18:10:03
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
9页 1425K
描述
Vdss (V) : 1700 V;Id @ 25C (A) : 72 A;Rds-on (typ) (mOhms) : 45 mOhms;Total Gate Charge (nQ) typ : 196 nQ;Maximum Power Dissipation (W) : 520 W;Vgs(th) (typ) : 2.6 V;Input Capacitance (Ciss) : 3130 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-247-3

RSM72N170T7 数据手册

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RSM72N170T7  
N-Channel SiC Power MOSFET  
VDS  
=
=
=
1700  
45  
V
mΩ  
A
Features  
High Blocking Voltage with Low On-Resistance  
High Speed Switching with Low Capacitance  
RDS(on)  
ID@25đ  
72  
Easy to Parallel and Simple to Drive  
Ultra-low Drain-gate capacitance  
Avalance Ruggedness  
Package  
Benefits  
Higher System Efficiency  
Reduced Cooling Requirements  
Increased Power Density  
Increased System Switching Frequency  
Applications  
Solar Inverters  
Switch Mode Power Supplies  
High Voltage DC/DC Converters  
Motor Drivers  
Part Number  
Package  
Marking  
RSM72N170T7  
TO-247-3  
72N170  
Pulsed Power Applications  
Maximum Ratings (TC=25đ unless otherwise specified)  
Symbol  
VDSmax  
VGSmax  
VGSop  
Parameter  
Value  
Unit  
V
Test Conditions  
Note  
Drain-Source Voltage  
1700  
-10/+25  
-5/+20  
72  
VGS=0V, ID=100μA  
Gate-Source Voltage  
Gate-Source Voltage  
V
Absolute maximum values  
V
Recommended operational values  
VGS=20V, Tc=25đ  
Fig. 19  
ID  
Continuous Drain Current  
A
48  
VGS=20V, Tc=100đ  
ID(pulse)  
PD  
Pulsed Drain Current  
Power Dissipation  
160  
A
W
Pulse width tp limited by TJmax  
Tc=25đ, TJ=150đ  
Fig. 22  
Fig. 20  
520  
TJ, TSTG Operating Junction and Storage Temperature  
-55 to +150  
260  
đ
TL  
Solder Temperature, 1.6mm from case for 10s  
đ
1
8.8  
Nm  
lbf-in  
Md  
Mounting Torque, (M3 or 6-32 screw)  
2023-08/110  
REV:O  

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