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RSM36N120T7 PDF预览

RSM36N120T7

更新时间: 2024-11-18 18:09:55
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
7页 1526K
描述
Vdss (V) : 1200 V;Id @ 25C (A) : 36 A;Rds-on (typ) (mOhms) : 80 mOhms;Total Gate Charge (nQ) typ : 32 nQ;Vgs(th) (typ) : 2.4 V;Input Capacitance (Ciss) : 1940 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-247

RSM36N120T7 数据手册

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RSM36N120T7  
N-Channel SiC Power MOSFET  
Features  
High Blocking Voltage with LowOn-Resistance  
High Speed Switching with Low Capacitance  
Easy to connect in parallel and to Drive  
VDS  
1200 V  
80 mΩ  
36 A  
RDS(on)  
Benefits  
ID@25oC  
Higher System Efficiency  
Reduced Cooling Requirements  
Increased Power Density  
Package  
Increased System Switching Frequency  
Applications  
High Voltage DC/DC Converters  
Motor Drives  
Switch Mode Power Supplies  
Pulsed Power applications  
G D S  
Marking  
Part Number  
RSM36N120T7  
Package  
TO-247-3  
36N120  
Maximum Ratings (TC=25oC unless otherwise specified)  
Symbol  
VDSmax  
VGSmax  
VGSop  
Parameter  
Drain-Source Voltage  
Value  
1200  
Unit  
Test Conditions  
Note  
V
V
V
VGS=0V, ID=100μA  
Gate-Source Voltage  
Gate-Source Voltage  
-10/+25  
-5/+20  
36  
Absolute maximum values  
Recommended operational values  
VGS=20V, Tc=25oC  
ID  
Continuous Drain Current  
A
24  
VGS=20V, Tc=100oC  
ID(pulse)  
PD  
Pulsed Drain Current  
Power Dissipation  
TBD  
A
W
oC  
Pulse width tp limited by TJmax  
Tc=25oC, TJ=150oC  
TBD  
TJ, TSTG Operating Junction and Storage Temperature  
-55 to +175  
2023-05/110  
REV:A  

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