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RSB18F2FH PDF预览

RSB18F2FH

更新时间: 2024-09-23 21:04:11
品牌 Logo 应用领域
罗姆 - ROHM 测试光电二极管
页数 文件大小 规格书
2页 973K
描述
Zener Diode, 18V V(Z), 10%, 0.2W, Silicon, Bidirectional,

RSB18F2FH 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.78配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL最大功率耗散:0.2 W
参考标准:AEC-Q101标称参考电压:18 V
表面贴装:YES技术:ZENER
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:10%
工作测试电流:1 mABase Number Matches:1

RSB18F2FH 数据手册

 浏览型号RSB18F2FH的Datasheet PDF文件第2页 
RSB18F2FH  
Diodes  
AEC-Q101 Qualified  
Bi-Directional Zener Diodes  
RSB18F2FH  
zDimensions (Unit : mm)  
zOutline  
RSB18F2 is a bi-directional zener diode having two  
RSB18F2FH  
0.15±0.05  
0.3±0.1  
(3)  
zeners confronted in one package, aimed to absorb the  
surge in plus and minus directions arising from the signal  
line in mobile phone, consumer electronics such as PC,  
and automotive applications.  
In general, two pieces of zener diodes are used as ESD  
protector to absorb the surge in +/ - directions. Paying  
attention to this point and using its original technology,  
ROHM succeeded to incorporate 2 zeners in one die /  
package for benefit of space-saving on the circuit board.  
7N  
0~0.1  
(1)  
(2)  
0.65  
0.65  
0.6 0.3  
0.9±0.1  
1.3±0.1  
2.0±0.2  
zFeatures  
1) Absorption of plus & minus surge with one package.  
2) Decrease of components and space-saving on the  
circuit board.  
zStructure  
(3)  
(1)  
(2)  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Power dissipation (*1)  
Junction temperature  
Limits  
200  
Symbol  
Pd  
Unit  
mW  
150  
Tj  
Operation temperature range  
-55 to +150  
Tstg  
(*1) Total of 2 elements  
zElectrical characteristics (Ta=25°C) (Rating of per diode)  
Parameter  
Zener voltage  
Conditions  
Symbol  
Min.  
Max.  
19.8  
0.1  
Unit  
Vz  
IR  
16.2  
V
IF=1mA  
Reverese current  
-
-
µA  
pF  
VR=13V  
Capacitance between terminals  
VR=0V , f=1MHz  
Ct  
30  
Zener voltage to be measured at 40ms after current starting to apply.  
1/1  

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