Datasheet > RSB12Z_10

RSB12Z_10

更新时间： 2024-02-12 02:34:58

品牌	Logo	应用领域
罗姆 - ROHM		装置
页数	文件大小	规格书
3页	370K
描述
Low Capacitance Protection Device

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中文翻译

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RSB12Z_10 数据手册

Low Capacitance Protection Device

RSB12Z

Applications

Dimensions(Unit : mm)

Land size figure(Unit : mm)

ESD Protection

0.4

1.2±0.1

0.13±0.05

0.32±0.05

(3)

Features

0.4

0.5

1)Ultra small mold type.(VMD3)

2)Low capacitance

3)Bi direction

0～0.1

0.8

(1)

(2)

0.22±0.05

0.4

VMD3

0.22±0.05

0.5±0.05

0.4

Construction

Silicon epitaxial planer

Structure

ROHM : VMD3

dot(year week factory)

Taping specifications(Unit : mm)

0.3±0.1

2.0±0.04

4.0±0.07

φ1.55±0.05

φ0.5±0.05

0.6±0.05

(4.0±0.1)

2.0±0.05

1.3±0.05

ꢀꢀꢀ

Absolute maximum ratings(Ta=25℃)

Parameter

Power dissipation

Limits

150

Symbol

Unit

℃

Junction temperature

Storage temperature

150

-55 to +150

Tstg

℃

Electical characteristics(Ta=25℃)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

V_Z

I_R

Zener voltage

9.6

14.4

0.10

I_Z=5mA

V_R=9V

Reverse current

μA

Capacitance between terminals

C_t

f=1MHz,V_R=0V

www.rohm.com

2010.08 - Rev.A

1/3

12 3

中文翻译

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