RSB12JS2FH

更新时间： 2024-02-23 11:02:00

品牌	Logo	应用领域
罗姆 - ROHM		瞬态抑制器二极管光电二极管
页数	文件大小	规格书
4页	105K
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RSB12JS2FH 数据手册

RSB12JS2

Diodes

Bi Direction ESD Protection Diode

(Silicon Epitaxial Planer)

RSB12JS2

zApplication

ESD Protection

zFeatures

1) Low capacitance

2) Bi direction

3) Ultra small mold type (EMD6)

zAbsolute maximum ratings (Ta=25°C)

Power dissipation

150 mW/Total

Junction temperature

Storage temperature

150 °C

−55 to 150 °C

Tstg

zElectrical characteristics (Ta=25°C) (∗Rating of per diode)

Standard

MAX.

Characteristic

Symbol

Test Condition

MIN.

Zener Voltage

Reverse current

Iz=

VR=

5 mA

9 V

9.6 V

14.4 V

0.1µA

VR=

1MHz

0 V

ꢀ

Junction capacitance

1 pF

TYP.

Please pay attention to static electricity when handling.

Zener voltage (Vz) shall be measured at 40ms after loading current.

∗

1/3

12 3 4

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