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RSB12JS2_11 PDF预览

RSB12JS2_11

更新时间: 2024-01-14 00:37:40
品牌 Logo 应用领域
罗姆 - ROHM 装置
页数 文件大小 规格书
3页 992K
描述
Low Capacitance Protection Device

RSB12JS2_11 数据手册

 浏览型号RSB12JS2_11的Datasheet PDF文件第2页浏览型号RSB12JS2_11的Datasheet PDF文件第3页 
Data Sheet  
Low Capacitance Protection Device  
RSB12JS2  
Applications  
DimensionsUnit : mm)  
Land size figure(Unit : mm)  
ESD Protection  
1.0  
0.5 0.5  
1.6±0.1  
0.22±0.05  
0.13±0.05  
(6)  
(5)  
(4)  
Features  
0.3  
0.15 0.15  
0.25  
0.25  
1) Ultra small mold type. (EMD6)  
2) Low capacitance  
3) Bi direction  
0~0.1  
0.4  
EMD6  
(1)  
(2)  
(3)  
0.5  
0.5  
Construction  
1.0±0.1  
0.5±0.05  
(6)(5) (4)  
Silicon Epitaxial Planar  
Structure  
ROHM : EMD6  
JEITA : SC-75A Size  
dot (year week factory)  
(1) (2) (3)  
Please make 3 and 6 Pin open in circuit upon use.  
Taping specificationsUnit : mm)  
+0.1  
2.0 0.05  
4.0 0.1  
φ1.5  
0.3 0.1  
0  
φ0.8 0.1  
1PIN  
4.0 0.1  
1.7 0.05  
0.65 0.1  
Absolute maximum ratings (Ta=25°C)  
Parameter  
Power dissipation  
Limits  
150  
Symbol  
P
Unit  
mW  
°C  
Junction temperature  
Storage temperature  
150  
Tj  
55 to 150  
Tstg  
°C  
Electrical characteristic (Ta=25°C)(Rating of per diode)  
Parameter  
Conditions  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Zener voltage  
VZ  
IR  
9.6  
-
-
14.4  
0.10  
-
IZ=5mA  
Reverse current  
-
-
μA  
pF  
VR=9V  
Capacitance between terminals  
Ct  
f=1MHz,VR=0V  
1
www.rohm.com  
2011.04 - Rev.C  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/2  

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