Datasheet > RS8802

RS8802

更新时间： 2024-04-09 19:02:42

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RS8802 数据手册

RS8802

Dual 5A High-Speed, Low-Side Gate Driver

1 FEATURES

3 DESCRIPTIONS

 Industry-Standard Pinout

The RS8802 dual-channel, high-speed, low-side gate

driver device is capable of effectively driving MOSFET

and IGBT power switches. Using a design that

inherently minimizes shoot-through current, the

RS8802 is capable of sourcing and sinking high peak-

current pulses into capacitive loads offering rail-to-rail

drive capability and extremely small propagation delay

typically 13ns.

 Two Independent Gate-Drive Channels

 5A Peak Source and Sink-Drive Current

 TTL and CMOS Compatible Logic Threshold

Independent of Supply Voltage

 Hysteretic-Logic Thresholds for High Noise

Immunity

 Inputs Pin-Voltage Levels Not Restricted by

VDD Pin Bias Supply Voltage

The RS8802 device is capable of handling -4V at input.

In addition, the drivers feature matched internal

 4.5V to 18V Single-Supply Range

 Outputs Held Low During VDD-UVLO, (Ensures propagation delays between the two channels, these

Glitch-Free Operation at Power up and Power

Down)

delays are very well suited for applications requiring

dual-gate drives with critical timing, such as

synchronous rectifiers. This also enables connecting

two channels in parallel to effectively increase current-

drive capability or driving two switches in parallel with

one input signal.

 Fast Propagation Delays (13ns Typical)

 Fast Rise and Fall Times (7ns and 6ns Typical)

 Two Outputs are in Parallel for Higher Drive

Current

 Outputs Held Low When Inputs Floating

 Operating Temperature Range of –40°C to

140°C

The RS8802 provides 5A source and 5A sink

(symmetrical drive) peak-drive current capability at

VDD = 12V.

 Micro SIZE PACKAGES: SOIC-8(SOP8)

The RS8802 is designed to operate over a wide VDD

range of 4.5 V to 18 V and wide temperature range of

-40°C to 140°C. Internal Undervoltage Lockout

(UVLO) circuitry on VDD pin holds output low outside

VDD operating range. The capability to operate at low

voltage levels such as below 5V, along with best-in-

class switching characteristics, is especially suited for

driving emerging wide band-gap power-switching

devices as GaN power semiconductor devices.

2 APPLICATIONS

 Switched-Mode Power Supplies

 DC-DC Converters

 Motor Control, Solar Power

 Gate Drive for Emerging Wide Band-Gap

Power Devices such as GaN

Device Information ⁽¹⁾

PART

NUMBER

BODY SIZE

(NOM)

PACKAGE

RS8802

SOIC-8(SOP8)

4.90mm×3.90mm

(1) For all available packages, see the orderable addendum at the

end of the data sheet.

REV A.1

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