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RS807M-B PDF预览

RS807M-B

更新时间: 2024-09-24 13:02:11
品牌 Logo 应用领域
美微科 - MCC 二极管局域网
页数 文件大小 规格书
2页 40K
描述
Rectifier Diode

RS807M-B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
JESD-609代码:e0端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

RS807M-B 数据手册

 浏览型号RS807M-B的Datasheet PDF文件第2页 
RS801  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆꢄꢃꢋꢌ  
ꢍꢎꢍꢏꢎꢅꢐꢑꢉꢒꢂꢉꢅꢓꢑꢌ  
ꢆꢔꢉꢑꢒꢕꢄꢃꢑꢔꢖꢅꢆꢗꢅꢘꢎꢙꢎꢎ  
ꢚꢔꢄꢛꢈꢜꢅꢝꢞꢎꢞ ꢅ!ꢏꢎ"#ꢘꢙꢙ  
$ꢉ%ꢜꢅ   ꢝꢞꢎꢞ ꢅ!ꢏꢎ"#ꢘꢙꢘ  
THRU  
RS807  
Features  
8 Amp Single Phase  
Bridge Rectifier  
50 to 1000 Volts  
·
·
·
·
·
Low Leakage  
Low Forward Voltage  
Any Mounting Position  
Silver Plated Copper Leads  
Surge Overload Rating Of 300 Amps  
RS-6  
Maximum Ratings  
A
D
·
·
Operating Junction Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Microsemi  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
C
B
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
A
-
+
RS801  
RS802  
RS803  
RS804  
RS805  
RS806  
RS807  
RS801  
RS802  
RS803  
RS804  
RS805  
RS806  
RS807  
35V  
70V  
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
E
1000v  
F
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
8.0A  
TA = 65°C  
G
Peak Forward Surge  
Current  
IFSM  
300A  
8.3ms, half sine  
H
I
Maximum Forward  
Voltage Drop Per  
Element  
VF  
1.1V  
IFM = 4.0A;  
TJ = 25°C  
DIMENSIONS  
INCHES  
MIN  
.895  
---  
MM  
MIN  
22.70  
---  
16.80  
3.8Æ  
25.40  
1.20  
6.60  
4.60  
4.70  
DIM  
A
B
C
D
E
MAX  
.935  
.760  
.700  
.23L  
---  
MAX  
NOTE  
23.70  
19.30  
17.80  
5.57L  
---  
1.30  
7.10  
5.60  
5.20  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
.660  
IR  
10mA  
1mA  
TJ = 25°C  
TJ = 100°C  
HOLE  
TYP  
.15Æ  
1.00  
.048  
.260  
.180  
.185  
x
x
F
.052  
.280  
.220  
.205  
G
H
I
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  

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