RS401M
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RS407M
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere
FEATURES
* Ideal for printed circuit board
* Surge overload rating: 200 amperes peak
* Mounting position: Any
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
RS-4M
* Epoxy: Device has UL flammability classification 94V-O
(
)
.189 4.8
(
)
)
)
.173 4.4
(
)
)
.995 25.3
(
.150 3.8
(
.134 3.4
(
.983 24.7
(
.057 1.45)
(
)
)
.114 2.9
(
)
)
.041 1.05
(
.083 2.1
(
.098 2.5
(
)
.069 1.7
(
)
)
.043 1.1
(
)
)
.031 0.8
(
.035 0.9
(
.023 0.6
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
)
)
(
)
)
(
)
)
.303 7.7
.303 7.7
.303 7.7
(
(
(
.287 7.3
.287 7.3
.287 7.3
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
RS401M RS402M RS403M RS404M RS405M RS406M RS407M UNITS
V
V
RRM
Volts
Volts
Volts
Amps
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
RMS
V
DC
O
100
1000
Maximum Average Forward Output Current at T
C
= 100oC
I
4.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating Temperature Range
I
FSM
150
Amps
T
J
-55 to + 150
-55 to + 150
40
0 C
0 C
pF
T
STG
Storage Temperature Range
C
J
Typical Junction Capacitance (Note)
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
RS401M RS402M RS403M RS404M RS405M RS406M RS407M UNITS
Maximum Forward Voltage Drop per Bridgeat
Element at 4.0A DC
1.0
Volts
V
F
Maximum Reverse Current at Rated
Dc Blocking Voltage per element
@T
@T
A
C
= 25oC
= 100oC
10
uAmps
mAmps
2001-5
I
R
0.2
NOTES : Measured at 1 MHZ and applied reverse voltage of 4.0 volts