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RS3GB

更新时间: 2024-02-07 06:25:35
品牌 Logo 应用领域
森美特 - SUNMATE 二极管光电二极管功效
页数 文件大小 规格书
2页 300K
描述
3.0A patch fast recovery diode 400V SMB series

RS3GB 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.57
二极管类型:RECTIFIER DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RS3GB 数据手册

 浏览型号RS3GB的Datasheet PDF文件第2页 
RS3AB - RS3MB  
SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES  
VOLTAGE RANGE: 50-1000V  
CURRENT: 3.0 A  
Features  
Glass Passivated Die Construction  
Fast Recovery Time for High Efficiency  
Low Forward Voltage Drop and High Current  
Capability  
!
!
!
!
!
Ideally Suited for Automatic Assembly  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
B
SMB(DO-214AA)  
Dim  
A
Min  
3.30  
4.06  
1.91  
0.15  
5.00  
0.10  
0.76  
2.00  
Max  
3.94  
4.70  
2.21  
0.31  
5.59  
0.20  
1.52  
2.62  
Mechanical Data  
A
J
C
B
!
!
Case: SMB/DO-214AA, Molded Plastic  
C
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
D
E
D
!
!
!
G
H
Weight: 0.093 grams (approx.)  
J
G
H
All Dimensions in mm  
E
TA = 25C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Characteristic  
Symbol  
Unit  
RS3AB RS3BB RS3DB RS3GB RS3JB RS3KB RS3MB  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
VRRM  
VRMS  
VDC  
100  
1000  
Maximum DC blocking voltage  
Maximum average forward rectified current  
at TL=75 C  
V
A
I(AV)  
3.0  
Peak forward surge current  
IFSM  
VF  
100.0  
1.3  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
A
V
Maximum instantaneous forward voltage at 3.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
Maximum reverse recovery time  
TA=25 C  
TA=100 C  
(NOTE 1)  
5.0  
100.0  
µ
A
IR  
trr  
ns  
150  
250  
500  
Typical junction capacitance (NOTE 2)  
CJ  
RθJA  
pF  
C/W  
C
60.0  
50.0  
Typical thermal resistance (NOTE 3)  
Operating junction and storage temperature range  
TJ,TSTG  
-50 to +150  
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A  
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
3.P.C.B. mounted with 0.2x0.2(5.0x5.0mm) copper pad areas  
www.sunmate.tw  
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