Datasheet > RS2501M

RS2501M

更新时间： 2024-09-25 02:59:23

品牌	Logo	应用领域
圣诺 - SENO		局域网二极管
页数	文件大小	规格书
2页	103K
描述
25A GLASS PASSIVATED BRIDGE RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RS2501M 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

RS25005M - RS2510M

25A GLASS PASSIVATED BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

High Case Dielectric Strength of 1500V

RS-25M

RMS

Dim

Min

29.70

19.70

17.00

3.80

7.30

9.80

2.00

0.90

2.30

Max

30.30

20.30

18.00

4.20

Low Reverse Leakage Current

Surge Overload Rating to 350A Peak

Ideal for Printed Circuit Board Applications

Plastic Material - UL Flammability

Classification 94V-0

Lead Free::For RoHS / Lead Free Version

7.70

10.20

2.40

1.10

Mechanical Data

2.70

Case: Molded Plastic

3.0 X 45°

Terminals: Plated Leads, Solderable per

MIL-STD-202, Method 208

4.40

3.40

3.10

2.50

0.60

10.80

4.80

3.80

3.40

2.90

0.80

11.20

Polarity: Molded on Body

Mounting: Through Hole for #6 Screw

Mounting Torque: 5.0 in-lbs Maximum

Weight: 6.6 grams (approx)

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics^{@ T = 25°C unless otherwise specified}

Single phase, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

25005M 2501M 2502M 2504M 2506M 2508M 2510M

Characteristic

Symbol

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

200

140

400

600

420

800

560

1000

700

V_R(RMS)

I_O

RMS Reverse Voltage

280

Average Forward Rectified Output Current

(Note 1)

@ T_C= 100°C

Non-Repetitive Peak Forward Surge Current 8.3 ms

single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

350

Forward Voltage (per element)

@ I_F= 12.5A

V_FM

I_R

1.05

Peak Reverse Current

at Rated DC Blocking Voltage

@T_C= 25°C

@ T_C= 125°C

500

µA

I²t Rating for Fusing (t < 8.3ms) (Note 1)

I²t

C_j

510

A²s

Typical Junction Capacitance (per element) (Note 2)

Typical Thermal Resistance Junction to Case (Note 3)

Operating and Storage Temperature Range

R_qJC

T_j,T_STG

0.6

°C/W

°C

-65 to +150

Notes:

1. Non-repetitive, for t > 1ms and < 8.3 ms.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.

www.senocn.com

RS25005M - RS2510M

1 of 2

Alldatasheet

中文翻译

下载PDF

与RS2501M相关器件

型号	品牌	获取价格	描述	数据表
RS2501M_12	RECTRON	获取价格	SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIERV VOLTAGE RANGE 50 to 1000 Volts CUR
RS2501M-B	RECTRON	获取价格	Bridge Rectifier Diode, 1 Phase, 4.3A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, RS-25
RS2501M-C	RECTRON	获取价格	Bridge Rectifier Diode, 1 Phase, 4.3A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, RS-25
RS2501M-C-HF	RECTRON	获取价格	Rectifier Diode,
RS2501M-HF	RECTRON	获取价格	Bridge Rectifier Diode,
RS2501MLS	RECTRON	获取价格	Reverse Voltage Vr : 50 V;Forward Current Io : 25.0 A;Max Surge Current : 300 A;Forward Vo
RS2502	CHENG-YI	获取价格	SINGLE-PHASE SILICON BRIDGE RECTIFIER
RS2502	SENO	获取价格	10/15/25A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
RS2502M	RECTRON	获取价格	SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 25 Amperes)
RS2502M	SENO	获取价格	25A GLASS PASSIVATED BRIDGE RECTIFIER

与RS2501M相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

4
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

8
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

79
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

71

产品中心

服务支持

精选活动

关于我们

帮助中心

RS2501M

RS2501M 数据手册

与RS2501M相关器件

与RS2501M相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RS2501M

RS2501M 数据手册

与RS2501M相关器件

与RS2501M相关文章

您还可以找

您在本页遇到什么问题？