Data Sheet No.PD60267
IRS2104(S)PbF
HALF-BRIDGE DRIVER
Product Summary
Features
• Floating channel designed for bootstrap operation
V
600 V max.
130 mA/270 mA
10 V - 20 V
• Fully operational to +600 V
OFFSET
• Tolerant to negative transient voltage, dV/dt
immune
I +/-
O
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout
V
OUT
• 3.3 V, 5 V, and 15 V input logic compatible
• Cross-conduction prevention logic
• Internally set deadtime
• High-side output in phase with input
• Shutdown input turns off both channels
• Matched propagation delay for both channels
• RoHS compliant
t
(typ.)
680 ns/150 ns
520 ns
on/off
Deadtime (typ.)
Packages
Description
The IRS2104 is a high voltage, high speed power
MOSFET and IGBT driver with dependent high- and low-
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible
with standard CMOS or LSTTL output, down to 3.3 V
8 Lead SOIC
IRS2104S
8 Lead PDIP
IRS2104
logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-
conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side
configuration which operates from 10 V to 600 V.
Typical Connection
up to 600 V
VCC
VCC
IN
VB
HO
VS
IN
TO
LOAD
SD
SD
COM
LO
(Refer to Lead Assignment for correct pin configuration). This diagram shows electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1